Single FETs, MOSFETs
HXY MOSFET AON7264E HXY N Channel Enhancement Mode MOSFET with Excellent RDS ON and Low Gate Charge
Product OverviewThe AON7264E is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate at gate voltages as low as 4.5V. This device is well-suited for battery protection and general switching ...
N Channel MOSFET HUASHUO HSS3N10 Featuring High Cell Density Trenched Design for and Switching
Product Overview The HSS3N10 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converters. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements with full functional ...
Durable P Channel HXY MOSFET HXY70P03D Featuring Low Gate Charge and Battery Protection Applications
Product OverviewThe HXY70P03D is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with operation down to 4.5V gate voltages. This device is ideal for battery protection and other switching applications.Product AttributesBrand: ...
Power electronics MOSFET HUASHUO HSP8119 P channel with low gate charge and high cell density design
Product Overview The HSP8119 is a P-channel, 80V fast switching MOSFET designed for synchronous buck converter applications. It features high cell density, excellent RDS(ON), and low gate charge. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and offers excellent CdV...
Fast Switching N Channel P Channel MOSFETs HUASHUO HSBB0903 Series for Industrial Power Applications
Product Overview The HSBB0903 series offers N-Channel and P-Channel Fast Switching MOSFETs designed for power management and DC motor control applications. These MOSFETs feature super low gate charge, 100% EAS guaranteed, and excellent CdV/dt effect decline, utilizing advanced high cell density ...
Single N-Channel Enhancement Mode MOSFET HUAYI HYG180N10LS1B 100V 50A Low On Resistance Device
Product OverviewThe HYG180N10LS1P&B is a single N-Channel Enhancement Mode MOSFET designed for high-frequency point-of-load synchronous buck converters and power tool applications. It offers a 100V/50A rating with low on-state resistance (RDS(ON) = 16.5m typ. @ VGS = 10V) and is 100% avalanche ...
Power MOSFET HUAYI HYG020N06LS1B Featuring Low RDS ON and High Continuous Drain Current for Switching Circuits
Product OverviewThe HYG020N06LS1P/B is a high-performance N-Channel Enhancement Mode MOSFET from Huayi Microelectronics. It features a low on-resistance (RDS(ON) = 2 m typ. at VGS = 10V), high continuous drain current (250A), and is 100% avalanche tested. Designed for reliability and ruggedness, it ...
SOT 23 Package N Channel MOSFET IRLML6344TRPBF HXY Featuring Low Gate Threshold Voltage and Switching
Product OverviewThe IRLML6344TRPBF is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 2.5V. This device is suitable for battery protection and other switching applications.Product ...
High Current N Channel MOSFET HUAYI HYG025N06LS2C2 Featuring Low On Resistance and Avalanche Testing
Product OverviewThe HYG025N06LS2C2 is a single N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features a low on-state resistance of 2.3 m (typ.) at VGS = 10V and 3.5 m (typ.) at VGS = 4.5V, a continuous drain current of 160A, and is 100% avalanche tested for ...
Fast switching P channel mosfet HUASHUO HSCB10P02 with trench technology and performance in power circuits
Product Overview The HSCB10P02 is a P-channel, 20V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it suitable for synchronous buck converter applications. This device meets RoHS and Green Product requirements ...
HXY MOSFET SCT3030KLHRC11 HXY SiC Power MOSFET Featuring High Blocking Voltage and Low On Resistance
Product OverviewThe SCT3030KLHRC11 is a 3rd Generation SiC Power MOSFET from Shenzhen HuaXuanYang Electronics CO.,LTD. It features N-Channel Enhancement Mode operation, high blocking voltage with low on-resistance, and high-speed switching with low capacitances. Its fast intrinsic diode offers low ...
Synchronous buck converter MOSFET HUASHUO HSU6901 with complementary N channel and P channel design
Product Overview The HSU6901 is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density for excellent RDS(ON) and gate charge characteristics. Designed for synchronous buck converter applications, these MOSFETs meet RoHS and Green Product requirements and ...
N channel MOSFET HUASHUO HSCE2530 featuring high cell density trench technology and low RDSON for power conversion
Product Overview The HSCE2530 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge characteristics, making it suitable for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product ...
Low On Resistance HUAYI HY1103S MOSFET 30V 11A N Channel Enhancement Mode for Power Circuits
Product OverviewThe HY1103S is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers a 30V/11A rating with low on-resistance of 9.5m (typ.) at VGS = 10V and 11.5m (typ.) at VGS = 4.5V. This device is 100% avalanche tested, ...
switching MOSFET HUAYI HYG180N10LS1P with 100V drain source voltage and 50A continuous drain current
Product OverviewThe HYG180N10LS1P is a single N-Channel Enhancement Mode MOSFET from Hymexa. It features a 100V/50A rating with low on-resistance (RDS(ON)= 16.5m typ. @ VGS = 10V). This device is 100% avalanche tested, reliable, and rugged, with lead-free (RoHS compliant) options available. It is ...
Power Switching N Channel Enhancement Mode MOSFET HUAYI HYG065N15NS1W with 150V Drain Source Voltage
Product OverviewThe HYG065N15NS1W is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a high drain-source voltage of 150V and a continuous drain current of 165A, with a low on-state resistance of 6.0m (typ.) at VGS = 10V. This device is 100% avalanche ...
N Channel Enhancement Mode MOSFET HXY MOSFET AOD4184 HXY with Low Gate Charge and Trench Technology
Product OverviewThe AOD4184-HXY is an N-Channel Enhancement Mode MOSFET featuring advanced trench technology for excellent RDS(ON) and low gate charge, capable of operating with gate voltages as low as 4.5V. It is suitable for battery protection and other switching applications.Product AttributesBra...
Switching N Channel Enhancement Mode MOSFET HUAYI HY045N10P with 100 Volt Voltage and TO 220 Package
HY045N10P/B N-Channel Enhancement Mode MOSFET The HY045N10P/B is an N-Channel Enhancement Mode MOSFET designed for switch applications and DC/DC converters. It offers high performance with a voltage rating of 100V and a continuous drain current of 120A. Key advantages include a low on-state ...
High Cell Density Trench N Channel MOSFET HUASHUO HSU80N03 Featuring RoHS Compliance and Performance
Product Overview The HSU80N03 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. It meets RoHS and Green Product requirements, is 100% EAS guaranteed, and offers full function reliability. Key ...
N Channel HXY MOSFET IRLR7843TRPBF HXY with TO 252 2L Package and Excellent Switching Performance
Product OverviewThe IRLR7843TRPBF is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is suitable for battery protection and general switching applications.Product ...
