Single FETs, MOSFETs
SOT23 3 package MOSFET BLUE ROCKET BRCS3400MC with 30V Drain Source Voltage and halogen free design
Product Overview The BRCS3400MC is an N-channel MOSFET in a SOT23-3 plastic package. It features a Drain-Source Voltage (VDS) of 30V and a continuous Drain Current (ID) of 5.8A at VGS = 10V. With low on-state resistance (RDS(ON) < 32m at VGS = 10V), this HF product is suitable for load switch or PWM ...
Power MOSFET BLUE ROCKET BRCS030N03ZC N Channel Type with Low RDS ON and Fast Switching Capability
Product Overview The BRCS030N03ZC is an N-Channel MOSFET housed in a PDFN56 plastic package. It features low RDS(ON) for minimized conductive loss, low Gate Charge for fast switching, and low thermal resistance. This HF product is designed for applications such as battery management, high-frequency ...
power management solution featuring BLUE ROCKET BRCS200P03YB P Channel MOSFET with low on resistance
Product Overview The BRCS200P03YB is a P-Channel MOSFET designed for high-efficiency power management in electronic devices. It features low on-resistance (RDS(ON)) to minimize conductive losses and low gate charge for fast switching capabilities. With low thermal resistance and a halogen-free ...
High voltage N channel MOSFET BLUE ROCKET BRFL20N65 in TO 220FL package for power electronics design
Product Overview The BRFL20N65 is an N-channel MOSFET in a TO-220FL plastic package, designed for high-efficiency applications. It features low gate charge and low feedback capacitance, enabling fast switching speeds. This MOSFET is ideal for use in high-frequency switch-mode power supplies, ...
Power MOSFET BL BLM07N06 D with high density cell design offering low RDS ON and high ESD protection
Product Overview The BLM07N06 is a Green Product N-Channel Power MOSFET designed with advanced trench technology, offering excellent RDS(ON) and low gate charge. It is suitable for a wide variety of power switching applications, including hard switched and high-frequency circuits, and uninterruptibl...
Lead Free P Channel Enhancement Mode Power MOSFET BL BLM2301 with Low Gate Charge and SOT 23 Package
Product Overview The Belling BLM2301 is a P-Channel Enhancement Mode Power MOSFET designed with advanced trench technology. It offers excellent RDS(ON), low gate charge, and the capability to operate with gate voltages as low as 2.5V. This makes it highly suitable for applications such as load ...
P Channel Power MOSFET BL BLM2305 Pb Free Type Featuring Low Gate Charge and Superior RDS ON for PWM Applications
Product Overview The Belling BLM2305 is a Pb-Free, P-Channel Enhancement Mode Power MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 2.5V. This power MOSFET is well-suited for use as a load switch or in ...
High Current N channel Power MOSFET BL BLP05N08G P with 4.4 Milliohm On Resistance and Fast Switching
Product Overview The BLP05N08G is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This technology significantly reduces conduction losses, enhances switching performance, and improves avalanche energy handling. It is ideally suited for demanding applications such as ...
P Channel Enhancement Mode Power MOSFET BL BLM4407 with Low Gate Charge and Lead Free Package SOP 8
Product Overview The Belling BLM4407 is a P-Channel Enhancement Mode Power MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 4.5V. This high-power and high-current handling device is lead-free ...
BL BLM10P03 E P Channel MOSFET Offering Low Gate Charge and High Drain Current for Power Electronics
Product Overview The Belling BLM10P03 is a P-Channel Power MOSFET designed with advanced trench technology, offering excellent RDS(ON) and low gate charge. It is suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, as well as battery ...
Power Factor Correction MOSFET Bestirpower BMD60N650UC1Z Featuring Low On Resistance and Gate Charge
Product Overview The Bestirpower BMx60N650UC1Z is an N-Channel Power MOSFET designed with advanced super junction technology. It offers very low on-resistance and gate charge, leading to high efficiency through optimized charge coupling. This user-friendly device provides an advantage of Low EMI and ...
N Channel Power MOSFET BL BLM8205 with Low Gate Charge and High Pulsed Drain Current Capability
Product Overview The BLM8205 is an N-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and the capability to operate with gate voltages as low as 2.5V. This device is well-suited for battery protection and other switching ...
Low Reverse Recovery Silicon Carbide MOSFET Bestirpower BCZ120N80M1 with Robust Avalanche Capability
Product Overview The BCZ120N80M1 is a high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding applications. It offers a robust 1200 V breakdown voltage and a continuous drain current of 34 A at 25, with a low on-resistance of 80 m. Key benefits include system efficiency ...
Bestirpower BMF65N340E2 Super Junction Power MOSFET suitable for chargers and power factor correction
BMF65N340E2 Super Junction Power MOSFET Product Overview The BMF65N340E2 is a Super Junction Power MOSFET from Bestirpower, engineered with advanced technology to achieve exceptionally low on-resistance and gate charge. This device offers significantly higher efficiency through optimized charge ...
Low EMI Super Junction MOSFET Bestirpower BMD65N360E2 compliant with Halogen Free and RoHS standards
Product Overview The BMD65N360E2 is a Super Junction Power MOSFET from Bestirpower, engineered with advanced super junction technology to achieve very low on-resistance and gate charge. This design facilitates high efficiency through optimized charge coupling technology, offering designers the ...
P Channel Enhancement Mode Power MOSFET BL BLM4953 with Low Gate Charge and Excellent RDS ON Performance
Product Overview The Belling BLM4953 is a P-Channel Enhancement Mode Power MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 4.5V. This device is well-suited for load switch and PWM applicatio...
Silicon Carbide N Channel MOSFET Bestirpower BCW65N45M1 Suitable for Industrial Power and ESS UPS Systems
Product Overview The BCW65N45M1 is a 650 V, 42 A N-Channel Silicon Carbide Power MOSFET designed for high-efficiency power conversion applications. It offers system efficiency improvement, higher frequency applicability, increased power density, and reduced cooling effort due to its high switching ...
N Channel Power MOSFET Bestirpower BMT65N065UC1 Ideal for Telecommunications and Server Power Supplies
Bestirpower BMT65N065UC1 N-Channel Power MOSFET Product Overview The Bestirpower BMT65N065UC1 is an N-Channel Power MOSFET designed with advanced super junction technology, offering very low on-resistance and gate charge for high efficiency. Its optimized charge coupling technology and user-friendly ...
BL BL6N120 A silicon N channel power MOSFET designed for avalanche energy and switching performance
Product Overview The BL6N120 is a silicon N-channel Enhanced MOSFET designed for high-frequency switching applications. Leveraging advanced MOSFET technology, it offers reduced conduction losses, improved switching performance, and enhanced avalanche energy. This transistor is suitable for Switched...
1200 Volt 72 Amp N Channel Silicon Carbide Power MOSFET Bestirpower BCZ120N35M2 for Power Conversion
Bestirpower BCZ120N35M2 N-Channel Silicon Carbide Power MOSFET Product Overview The Bestirpower BCZ120N35M2 is a 1200 V, 72 A N-Channel Silicon Carbide Power MOSFET designed for high-efficiency power conversion applications. It features high switching speed with low gate charge, a fast intrinsic ...
