Single FETs, MOSFETs

Product Overview The BRCS3400MC is an N-channel MOSFET in a SOT23-3 plastic package. It features a Drain-Source Voltage (VDS) of 30V and a continuous Drain Current (ID) of 5.8A at VGS = 10V. With low on-state resistance (RDS(ON) < 32m at VGS = 10V), this HF product is suitable for load switch or PWM applications. The device is halogen-free. Product Attributes Brand: fsbrec Package Type: SOT23-3 Plastic Package Product Type Code: A0 Company Code: H Material: Halogen-Free

Product Overview The BRCS030N03ZC is an N-Channel MOSFET housed in a PDFN56 plastic package. It features low RDS(ON) for minimized conductive loss, low Gate Charge for fast switching, and low thermal resistance. This HF product is designed for applications such as battery management, high-frequency point-of-load synchronous Buck converters for MB/NB/UMPC/VGA, networking DC-DC power systems, and load switches. Product Attributes Brand: FS (implied by datasheet URL) Product

Product Overview The BRCS200P03YB is a P-Channel MOSFET designed for high-efficiency power management in electronic devices. It features low on-resistance (RDS(ON)) to minimize conductive losses and low gate charge for fast switching capabilities. With low thermal resistance and a halogen-free product designation, this MOSFET is suitable for demanding applications such as notebook AC-in load switches and battery protection for charging/discharging. Its PDFN33A-8L package

Product Overview The BRFL20N65 is an N-channel MOSFET in a TO-220FL plastic package, designed for high-efficiency applications. It features low gate charge and low feedback capacitance, enabling fast switching speeds. This MOSFET is ideal for use in high-frequency switch-mode power supplies, electronic lamp ballasts based on half-bridge configurations, and Uninterruptible Power Supplies (UPS). Product Attributes Brand: FS (implied by datasheet URL) Package Type: TO-220FL

Product Overview The BLM07N06 is a Green Product N-Channel Power MOSFET designed with advanced trench technology, offering excellent RDS(ON) and low gate charge. It is suitable for a wide variety of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Key features include a VDS of 60V, ID of 95A, and RDS(ON) < 7m @ VGS=10V. The device utilizes a high-density cell design for lower Rdson, special process

Product Overview The Belling BLM2301 is a P-Channel Enhancement Mode Power MOSFET designed with advanced trench technology. It offers excellent RDS(ON), low gate charge, and the capability to operate with gate voltages as low as 2.5V. This makes it highly suitable for applications such as load switching and Pulse Width Modulation (PWM). The device boasts high power and current handling capabilities and is a lead-free product. Product Attributes Brand: Belling Product Type: P

Product Overview The Belling BLM2305 is a Pb-Free, P-Channel Enhancement Mode Power MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 2.5V. This power MOSFET is well-suited for use as a load switch or in Pulse Width Modulation (PWM) applications, providing high power and current handling capability. Product Attributes Brand: Belling Product Type: Pb Free Product Package: SOT-23

Product Overview The BLP05N08G is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This technology significantly reduces conduction losses, enhances switching performance, and improves avalanche energy handling. It is ideally suited for demanding applications such as motor drivers and high-speed switching circuits. Product Attributes Brand: Belling Certifications: RoHS product Technical Specifications Model Description Key Characteristics

Product Overview The Belling BLM4407 is a P-Channel Enhancement Mode Power MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 4.5V. This high-power and high-current handling device is lead-free and suitable for applications such as battery switches, load switches, and power management. Product Attributes Brand: Belling Product Type: P-Channel Enhancement Mode Power

Product Overview The Belling BLM10P03 is a P-Channel Power MOSFET designed with advanced trench technology, offering excellent RDS(ON) and low gate charge. It is suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, as well as battery protection. Its high-density cell design contributes to lower RDS(ON), and it is available in various packages optimized for good heat dissipation. Product Attributes Brand: Belling

Product Overview The Bestirpower BMx60N650UC1Z is an N-Channel Power MOSFET designed with advanced super junction technology. It offers very low on-resistance and gate charge, leading to high efficiency through optimized charge coupling. This user-friendly device provides an advantage of Low EMI and low switching loss, making it suitable for applications such as Power Factor Correction (PFC), adapters, LCD TVs, LED lighting, and Uninterruptible Power Supplies (UPS). Key

Product Overview The BLM8205 is an N-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and the capability to operate with gate voltages as low as 2.5V. This device is well-suited for battery protection and other switching applications, providing high power and current handling capabilities. It is a lead-free product available in a surface mount SOT23-6L package. Product Attributes Brand: Belling Product

Product Overview The BCZ120N80M1 is a high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding applications. It offers a robust 1200 V breakdown voltage and a continuous drain current of 34 A at 25, with a low on-resistance of 80 m. Key benefits include system efficiency improvement, higher frequency applicability, increased power density, and reduced cooling effort due to its high switching speed and low gate charge. The device features a fast intrinsic

BMF65N340E2 Super Junction Power MOSFET Product Overview The BMF65N340E2 is a Super Junction Power MOSFET from Bestirpower, engineered with advanced technology to achieve exceptionally low on-resistance and gate charge. This device offers significantly higher efficiency through optimized charge coupling, providing designers with the advantages of low EMI and reduced switching losses. Ideal for demanding power applications, it ensures reliable performance and enhanced system

Product Overview The BMD65N360E2 is a Super Junction Power MOSFET from Bestirpower, engineered with advanced super junction technology to achieve very low on-resistance and gate charge. This design facilitates high efficiency through optimized charge coupling technology, offering designers the advantages of low EMI and reduced switching losses. Ideal for demanding applications such as Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), Power Factor

Product Overview The Belling BLM4953 is a P-Channel Enhancement Mode Power MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 4.5V. This device is well-suited for load switch and PWM applications, providing high power and current handling capability. It is a lead-free product. Product Attributes Brand: Belling Product Type: P-Channel Enhancement Mode Power MOSFET

Product Overview The BCW65N45M1 is a 650 V, 42 A N-Channel Silicon Carbide Power MOSFET designed for high-efficiency power conversion applications. It offers system efficiency improvement, higher frequency applicability, increased power density, and reduced cooling effort due to its high switching speed, low gate charge, and fast intrinsic diode with low reverse recovery. Key applications include solar inverters, ESS, UPS, EV charging stations, server and telecom power

Bestirpower BMT65N065UC1 N-Channel Power MOSFET Product Overview The Bestirpower BMT65N065UC1 is an N-Channel Power MOSFET designed with advanced super junction technology, offering very low on-resistance and gate charge for high efficiency. Its optimized charge coupling technology and user-friendly design contribute to low EMI and reduced switching losses. This MOSFET is ideal for applications such as PC power supplies, server power supplies, telecommunications, solar

Product Overview The BL6N120 is a silicon N-channel Enhanced MOSFET designed for high-frequency switching applications. Leveraging advanced MOSFET technology, it offers reduced conduction losses, improved switching performance, and enhanced avalanche energy. This transistor is suitable for Switched-Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications. Product Attributes Brand: Belling Product Line: Power MOSFET RoHS Compliant: Yes Technical

Bestirpower BCZ120N35M2 N-Channel Silicon Carbide Power MOSFET Product Overview The Bestirpower BCZ120N35M2 is a 1200 V, 72 A N-Channel Silicon Carbide Power MOSFET designed for high-efficiency power conversion applications. It features high switching speed with low gate charge, a fast intrinsic diode with low reverse recovery, and robust avalanche capability, all of which contribute to system efficiency improvement, higher frequency applicability, increased power density,