Single FETs, MOSFETs

Bestirpower BCBF120N80M1 N-Channel Silicon Carbide Power MOSFET The Bestirpower BCBF120N80M1 is a 1200 V, 34 A, 80 m N-Channel Silicon Carbide Power MOSFET designed for high-efficiency power conversion applications. This MOSFET offers significant advantages including system efficiency improvement, higher frequency applicability, increased power density, and reduced cooling effort due to its high switching speed with low gate charge and fast intrinsic diode with low reverse

Product Overview The BMD65N380E2 is a 650V, 11A, 380m Super Junction Power MOSFET from Bestirpower, leveraging advanced super junction technology for very low on-resistance and gate charge. This device is designed to achieve high efficiency through optimized charge coupling technology, offering designers the advantages of Low EMI and reduced switching losses. It is ideally suited for applications such as Switch Mode Power Supply (SMPS), Uninterruptible Power Supply (UPS),

Product Overview The ASDM30DN30E is a 30V Dual N-Channel Power MOSFET from Ascend Semiconductor Co., Ltd. It features advanced high cell density Trench technology, offering 100% EAS Guaranteed, super low gate charge, and excellent CdV/dt effect decline. This MOSFET is designed for high-performance applications requiring efficient power management. It is available as a Green Device. Product Attributes Brand: Ascend Semiconductor Co., Ltd. Product Type: Dual N-Channel Power

BCZ120N40M1 N-Channel Silicon Carbide Power MOSFET The BCZ120N40M1 is a high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding power applications. It offers a 1200V drain-to-source voltage, 60A continuous drain current, and a low on-resistance of 40m. This MOSFET provides significant advantages including system efficiency improvement, higher frequency applicability, increased power density, and reduced cooling effort due to its high switching speed,

Product Overview The BMF65N120UC1 is a high-performance N-Channel Power MOSFET from Bestirpower, leveraging advanced super junction technology to achieve exceptionally low on-resistance and gate charge. This design contributes to significantly higher efficiency, making it ideal for applications requiring optimized charge coupling. Designers benefit from reduced EMI and low switching losses, enhancing overall system performance. Key features include an ultra-fast body diode

Product Overview The BCZ65N45M1 is a high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding power applications. Featuring a 650V breakdown voltage and a low on-resistance of 45 m, this MOSFET offers significant advantages including improved system efficiency, higher frequency operation, increased power density, and reduced cooling requirements. Its robust design includes a fast intrinsic diode with low reverse recovery and a strong avalanche capability

Product Overview The BMW80N180C1 is an 800V, 23A N-Channel Power MOSFET from Bestirpower, utilizing advanced super junction technology for very low on-resistance and gate charge. This MOSFET offers extremely low losses due to its very low FOM Rdson*Qg and Eoss, contributing to high efficiency through optimized charge coupling technology. Its user-friendly design provides low EMI and low switching loss, making it suitable for applications such as PC power, server power

BCW120N40M1 - 1200V 40m Silicon Carbide Power MOSFET Product Overview The BCW120N40M1 is a 1200V N-Channel Silicon Carbide Power MOSFET designed for high-efficiency power applications. It offers system efficiency improvement, higher frequency applicability, increased power density, and reduced cooling effort due to its high switching speed with low gate charge and fast intrinsic diode with low reverse recovery. This MOSFET is robust with tested avalanche capability and is

Product Overview The BMD65N340E2 is a Super Junction Power MOSFET from Bestirpower, engineered with advanced super junction technology to achieve exceptionally low on-resistance and gate charge. This device is designed to deliver significantly higher efficiency through optimized charge coupling technology, offering advantages such as low EMI and reduced switching losses for designers. It is suitable for a range of power electronics applications including Switch Mode Power

Product Overview The BL18N20 is a silicon N-channel Enhanced MOSFET designed for high-frequency switching applications. Leveraging advanced MOSFET technology, it offers reduced conduction losses, improved switching performance, and enhanced avalanche energy capabilities. This transistor is well-suited for use in Switched-Mode Power Supplies (SMPS), high-speed switching circuits, and general-purpose applications. Its key features include fast switching, low Crss, 100%

Product Overview The ASDM100N15KQ is a 100V N-Channel MOSFET designed for high-performance applications. It offers a continuous drain current of 15A and a low on-resistance of 95m (Typ.) at VGS = 10V. Key features include low total gate charge, low reverse transfer capacitance, improved dv/dt capability, and fast switching speed, making it suitable for Uninterruptible Power Supply (UPS) and Inverter Systems. Product Attributes Brand: Ascend Semiconductor Co., Ltd Product

Product Overview The Belling BLM9435 is a P-Channel Enhancement Mode Power MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, with operation possible at gate voltages as low as 4.5V. This device is well-suited for use as a load switch or in Pulse Width Modulation (PWM) applications, providing high power and current handling capability. It is a lead-free product. Product Attributes Brand: Belling Product Type: P-Channel Enhancemen

Product Overview The Bestirpower BCBF170N1000P1 is a 1700V, 5A N-Channel Silicon Carbide Power MOSFET designed for high-performance applications. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitance, and is easy to parallel and simple to drive. This MOSFET is avalanche rugged, resistant to latch-up, and is Halogen Free and RoHS Compliant. Key applications include LED lighting power supplies, high voltage DC/DC converters,

DMZ1521E High-threshold Voltage Depletion-Mode Power MOSFETThe DMZ1521E is a high-threshold voltage, depletion-mode power MOSFET from ARK Microelectronics Co., Ltd. It features a proprietary advanced planar technology with a rugged polysilicon gate cell structure, offering ESD improved capability and fast switching speeds. This device is designed for applications requiring normally-on switches, synchronous rectification, linear amplifiers, converters, current sources, and in

Product Overview The Ascend Semiconductor ASDM3401ZA is a P-Channel MOSFET designed for high-density cell applications, offering extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability. It is suitable for PWM applications, load switching, and power management scenarios. Product Attributes Brand: Ascend Semiconductor Product Line: P-Channel MOSFET Model Series: ASDM3401ZA Package: SOT23 Technical Specifications Parameter Symbol Test Condition

Product Overview The BCZ120N21M1 is a high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding power applications. With a robust 1200 V breakdown voltage and a low on-resistance of 21 m, this MOSFET offers significant system efficiency improvements, higher frequency applicability, and increased power density. Key benefits include reduced cooling effort, high switching speed with low gate charge, and a fast intrinsic diode with low reverse recovery. It is

Product Overview The Belling BLP02N06 is an N-channel Enhanced Power MOSFET designed using advanced double trench technology. This technology significantly reduces conduction losses, improves switching performance, and enhances avalanche energy capabilities. It is an ideal component for synchronous rectification and high-speed switching applications, offering fast switching, low on-resistance, low gate charge, low reverse transfer capacitances, and high avalanche ruggedness.

Product Overview The BCBF65N45M1 is a 650V, 45m N-Channel Silicon Carbide Power MOSFET designed for high-efficiency power conversion applications. It offers high switching speed with low gate charge, a fast intrinsic diode with low reverse recovery, and robust avalanche capability. This MOSFET is ideal for use in solar inverters, ESS, UPS, EV charging stations, server and telecom power supplies, and industrial power supplies, contributing to system efficiency improvement,

Silicon Carbide Power MOSFET The BCBF170N650T1 is a 1700V, 8A, 650m N-Channel Silicon Carbide Power MOSFET designed for high-efficiency power conversion applications. It offers superior performance characteristics, including high blocking voltage, low on-resistance, and high-speed switching capabilities. These features contribute to higher system efficiency, reduced cooling requirements, increased power density, and the enablement of higher operating frequencies. The device

Product OverviewThe DMZ1315EL/DMX1315EL is an UltraVt depletion-mode power MOSFET manufactured by ARK Microelectronics. It utilizes proprietary advanced planar and Ultrahigh Vth technologies, offering ESD improved capability and a high threshold voltage. This device is designed for applications requiring stable power delivery to loads, with inherent voltage clamping capabilities that protect the load without the need for a Zener diode, thereby reducing circuit consumption. It