Single FETs, MOSFETs

Product Overview This Power MOSFET is designed for high-performance power applications, offering robust features such as PFC, hard, and soft switching topologies. It is suitable for both industrial and consumer power supplies. The device is free from Halogen and RoHS compliant, ensuring environmental responsibility. Key characteristics include a 650V drain-to-source breakdown voltage and a low on-resistance of 380m (typ.). Its advanced design supports efficient power

Product Overview The BCZ120N160W1 is a N-Channel Silicon Carbide Power MOSFET designed for high-performance applications. It offers a high blocking voltage of 1200V combined with low on-resistance (160 m typ.) and high-speed switching capabilities due to low capacitances. This MOSFET is easy to parallel and simple to drive, featuring avalanche ruggedness and compliance with Halogen Free and RoHS standards. Its design contributes to higher system efficiency, reduced cooling

Product Overview The BMF65N100UC1 is a Super Junction Power MOSFET developed by Bestirpower, leveraging advanced super junction technology to achieve very low on-resistance and gate charge. This design facilitates high efficiency through optimized charge coupling technology, offering designers the advantage of low EMI and reduced switching losses. Its ultra-fast body diode and extremely low losses, attributed to a very low FOM (Rdson*Qg and Eoss), contribute to high

Product Overview The Belling BLM3404 is a Pb-Free N-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for load switch and PWM applications. This device boasts high power and current handling capability. Product Attributes Brand: Belling Product Type: Pb Free Product Package: SOT-23 Material: Lead-free Technical Specifications General Features VDS 30V ID 5.8A RDS(ON) @ VGS=10V < 31m

Product Overview The BMW60N076UC1 is a high-performance N-Channel Power MOSFET from Bestirpower, engineered with advanced super junction technology. This MOSFET offers exceptionally low on-resistance and gate charge, leading to significantly improved efficiency through optimized charge coupling. Designed for user-friendliness, it provides the advantage of low EMI and reduced switching losses, making it ideal for demanding applications. Its ultra-fast body diode and extremely

Product Overview The Belling BLM04N06 is a 60V N-Channel Power MOSFET designed with advanced trench technology, offering excellent RDS(ON) and low gate charge. This green product is suitable for a wide variety of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Key characteristics include a VDS of 60V, ID of 150A, and RDS(ON) < 4.2m at VGS=10V. It features a high-density cell design for lower Rdson, fully

Product Overview The BLP045N10 is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction loss, enhances switching performance, and improves avalanche energy. It is an ideal component for motor drivers and Battery Management Systems (BMS), offering fast switching, low on-resistance (RDS(on) 4.5m), low gate charge, low reverse transfer capacitances, and high avalanche ruggedness. This product is RoHS

Product Overview The BCBF120N21M1 is a high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding power applications. It offers a 1200 V drain-to-source voltage and a continuous drain current of 100 A, with a low on-resistance of 21 m. This MOSFET provides significant benefits including system efficiency improvement, higher frequency applicability, increased power density, and reduced cooling effort due to its high switching speed, low gate charge, and

Product Overview The Belling BLM3401 is a P-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 2.5V. This device is well-suited for applications such as load switching and Pulse Width Modulation (PWM). Key features include a VDS of -30V, ID of -4.2A, and high power and current handling capabilities. It is a lead-free product. Product Attributes Brand:

Product Overview The Bestirpower BMD60N600C1 is a high-performance N-Channel Power MOSFET designed with advanced super junction technology. It offers extremely low losses due to a very low Figure of Merit (FOM) of Rdson*Qg and Eoss, along with very high commutation ruggedness. Optimized charge coupling technology ensures high efficiency, while Low EMI and low switching loss provide advantages for designers. This MOSFET is suitable for applications such as PFC, SPWM, LCD TV,

Product Overview The Belling BLM3400 is a Pb Free N-Channel Enhancement Mode Power MOSFET designed with advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 2.5V. This device is suitable for battery protection and other switching applications, including PWM applications, load switches, and power management. It features high power and current handling capability. Product Attributes Brand: Belling Product Type: N

Bestirpower BMD60N190C1 Super Junction Power MOSFET Product Overview The Bestirpower BMD60N190C1 is a Super Junction Power MOSFET utilizing bestirpowers advanced super junction technology. This design enables very low on-resistance and gate charge, leading to significantly higher efficiency through optimized charge coupling technology. These user-friendly devices offer designers the advantage of Low EMI and low switching loss, making them suitable for a wide range of power

Product Overview The Bestirpower BCW120N40M2 is an N-Channel Silicon Carbide Power MOSFET designed for high-performance applications. It features high switching speed with low gate charge and a fast intrinsic diode with low reverse recovery, contributing to system efficiency improvement and higher frequency applicability. Its robust avalanche capability, 100% avalanche tested, and compliance with Halogen Free and RoHS standards make it suitable for demanding applications such

Product Overview The BMB80N180C1 is a high-performance N-Channel Power MOSFET from Bestirpower, engineered with advanced super junction technology. This MOSFET offers exceptionally low on-resistance and gate charge, leading to significantly improved efficiency through optimized charge coupling. Designed for user-friendliness, it provides designers with the advantage of Low EMI and reduced switching losses. Key applications include PC power supplies, server power supplies,

Product Overview The BC018SG12SWSD is a high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding applications. It offers a high blocking voltage of 1200V combined with a low on-resistance of 18m, enabling system efficiency improvement and higher frequency applicability. Key features include high-speed switching with low capacitances, ease of paralleling, simple drive requirements, and avalanche ruggedness. This device is also Halogen Free and RoHS

BL13N50 Power MOSFET Product Overview The BL13N50 is a silicon N-channel Enhanced MOSFET designed using advanced MOSFET technology to minimize conduction losses, enhance switching performance, and improve avalanche energy. This transistor is well-suited for applications such as Switched-Mode Power Supplies (SMPS), high-speed switching, and general-purpose use. Key features include fast switching, low Crss (typical 12pF), 100% avalanche testing, and improved dv/dt capability.

Product Overview The BMx65N190UC1 is a Super Junction Power MOSFET from Bestirpower, engineered with advanced super junction technology to achieve exceptionally low on-resistance and gate charge. This design facilitates significantly higher efficiency through optimized charge coupling technology, offering designers the advantages of Low EMI and reduced switching loss. Its ultra-fast body diode, extremely low losses (low FOM Rdson*Qg and Eoss), and high commutation ruggedness

Product Overview The BMW65N100UC1 is a 650 V, 35 A N-Channel Power MOSFET from Bestirpower, leveraging advanced super junction technology for exceptionally low on-resistance and gate charge. This design optimizes charge coupling for significantly higher efficiency, offering designers the advantage of low EMI and reduced switching losses. Its ultra-fast body diode and extremely low FOM (Rdson*Qg and Eoss) contribute to very low losses, while its high commutation ruggedness

Product Overview The Ascend Semiconductor ASDM40N100P is a 40V N-Channel MOSFET designed for high-performance applications. It features low on-resistance and fast switching speeds, making it ideal for DC/DC converters, on-board server power, and synchronous rectification. This device is 100% avalanche tested and available in lead-free and green (RoHS compliant) options. Product Attributes Brand: Ascend Semiconductor Co.,Ltd Product Line: Ascend Compliance: Lead Free and Green

Product Overview The BCBF120N40M1 is a high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding applications. It offers superior system efficiency, higher frequency applicability, and increased power density due to its high switching speed, low gate charge, and fast intrinsic diode with low reverse recovery. This MOSFET is ideal for solar inverters, EV charging stations, UPS systems, and industrial power supplies, reducing cooling requirements and