Single FETs, MOSFETs
Low gate charge N Channel Enhancement Mode MOSFET A Power microelectronics AP80N03D with 30V rating and trench technology
Product Overview The AP80N03D is a 30V N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 4.5V. This MOSFET is well-suited for battery protection and other switching ...
N Channel Silicon MOSFET AUB050N085 Optimized for Flyback Converter and Forward Converter Designs
Product Overview The AUP052N085, AUB050N085, and AUN045N085 are N-Channel Silicon MOSFETs designed for efficient switching applications. These enhancement-mode MOSFETs are easy to control and feature low drain-source on-resistance (RDS(ON)). They are ideal for use in single-ended flyback or two...
Power Switching Silicon N Channel MOSFET ASU65R550E Suitable for LCD and PDP Television Circuits
Product Overview The ASA65R550E, ASU65R550E, ASD65R550E, and ASE65R550E are N-Channel Silicon MOSFETs designed for efficient power switching applications. These enhancement-mode devices feature low drain-source on-resistance (RDS(on) = 0.50 typ.) and easy gate control for switching. They are ideal ...
P Channel MOSFET A Power microelectronics AP50P03NF for switching and mobile fast charging circuits
Product Overview The AP50P03NF is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate at gate voltages as low as 4.5V. This MOSFET is ideally suited for battery protection and other switching ...
Silicon N Channel MOSFET ANHI ASA70R600E optimized for in LCD PDP TVs and power adaptor applications
Product Overview The ASA70R600E is a Silicon N-Channel MOS Field-Effect Transistor designed for applications in single-ended flyback or two-transistor forward topologies. It is suitable for use in PD adaptors, LCD & PDP TVs, and LED lighting. Key features include a low drain-source on-resistance of ...
P Channel MOSFET ALJ SI2301 designed for battery powered systems portable equipment and load switches
Product Overview The SI2301 is a P-Channel logic enhancement mode power MOSFET manufactured using high cell density, DMOS trench technology. This advanced design is optimized to minimize on-state resistance, offering exceptional on-resistance and maximum DC current capability. It is ideal for power ...
N Channel Silicon MOSFET AUB056N10 Designed for Telecommunications Power Switching and Rectification
Product Overview The AUN053N10, AUB056N10, and AUP056N10 are N-Channel Silicon MOSFETs designed for high-speed power switching applications. They are particularly suited for synchronous rectification in Switch Mode Power Supplies (SMPS), as well as hard switching and high-speed DC/DC converters in ...
650 Volt N Channel VDMOSFET A Power microelectronics AP4N65D for Power Switching and UPS Applications
Product Overview The AP4N65D/Y is a 650V N-Channel Enhancement Mode VDMOSFET manufactured using a self-aligned planar technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is suitable for various power ...
Low Resistance Silicon N Channel MOSFET ANHI ASA80R900E for in Flyback and Forward Topology Designs
Product Overview The ASA80R900E is a Silicon N-Channel MOS Field-Effect Transistor (MOSFET) designed for high-efficiency power conversion applications. It features a low drain-source on-resistance (RDS(ON) = 620m typ.) and is easy to control with a gate switching enhancement mode. Ideal for single...
Durable P Channel Enhancement Mode MOSFET ANPEC APM3095PUC TRL for Desktop Computer Power Management
Product Overview The APM3095PU is a P-Channel Enhancement Mode MOSFET designed for power management applications. It features a super high-density cell design, offering reliable and rugged performance. Key specifications include -30V drain-source voltage and -8A continuous drain current. This lead...
100V N Channel Enhancement Mode MOSFET A Power microelectronics APG110N10NF with low gate charge and RDS
Product Overview The APG110N10NF is a 100V N-Channel Enhancement Mode MOSFET from APM Microelectronics, utilizing advanced APM-SGT technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is well-suited for battery protection and other ...
30V 60A N Channel Enhancement Mode MOSFET A Power microelectronics AP60N03NF for Battery Protection Applications
Product Overview The AP60N03NF is a 30V N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 4.5V. This MOSFET is ideally suited for battery protection and other switching ...
Pb Free P Channel MOSFET ALJ AO3401 with Low Gate Charge and Enhanced Performance in SOT 23 Package
Product Overview The AO3401 is a P-Channel Enhancement Mode Field Effect Transistor designed with advanced trench technology. It offers excellent RDS(ON), low gate charge, and the capability to operate with gate voltages as low as 2.5V. This makes it suitable for applications such as load switches ...
Silicon N Channel Power MOSFET ANHI ASW65R110E Suitable for Boost PFC and Telecom Power Applications
Product Overview The ASW65R110E is a Silicon N-Channel Power MOSFET designed for high-efficiency power conversion applications. It features low drain-source on-resistance (RDS(on)) of 0.095 (typ.) and easy gate control. This enhancement mode MOSFET is suitable for use in Boost PFC switches, half...
switching solution featuring A Power microelectronics AP3P10MI P Channel MOSFET with 100V VDS and 3A current
Product Overview The AP3P10MI is a P-Channel Enhancement Mode MOSFET from APM Microelectronics, utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 5V. This MOSFET is designed for applications such as battery protection and ...
1200V N Channel Silicon Carbide MOSFET ANHI ADW120N040BH for Power Conversion Applications
Product Overview The ADQ120N040BH and ADW120N040BH are 1200V N-Channel Silicon Carbide Power MOSFETs designed for high-efficiency power conversion applications. These devices offer a low drain-source on-resistance (RDS(ON) = 40m typ.) and are easy to control, featuring enhancement mode operation ...
Power Conversion Silicon N Channel MOSFET ANHI ASA60R180EFD with Gate Threshold Voltage 3 to 5 Volts
Product Overview The ASA60R180EFD is a Silicon N-Channel MOS MOSFET designed for high-efficiency power conversion applications. It features a low drain-source on-resistance (RDS(ON) = 0.140 typ.) and is easy to control, operating in enhancement mode. This MOSFET is ideal for use in half bridge, ...
Silicon N Channel Enhancement Mode Transistor ANHI ASB70R380E Suitable for Power Supply Circuits
Product Overview The ASA70R380E, ASD70R380E, and ASB70R380E are N-Channel Silicon MOSFETs designed for efficient power conversion. These enhancement-mode devices feature low drain-source on-resistance (RDS(on)) and easy gate control, making them suitable for single-ended flyback or two-transistor ...
ASW65R038EFD Silicon N Channel MOSFET Featuring Low RDS ON for Telecom Power and EV Charging Systems
ASW65R038EFD MOSFET Silicon N-Channel MOS Product Overview The ASW65R038EFD is a Silicon N-Channel MOSFET designed for soft switching applications. It is suitable for Boost PFC switch, HB, AHB, and LLC half-bridge and full-bridge topologies, including phase-shift-bridge (ZVS) and LLC applications. ...
ASA65R550E N Channel MOSFET transistor featuring low drain source on resistance for power switching
Product Overview The ASA65R550E, ASU65R550E, and ASD65R550E are N-Channel MOSFET transistors designed for high-efficiency power switching applications. These devices are optimized for boost PFC topologies, LCD & PD adaptors, and LED lighting. Key features include low drain-source on-resistance, easy ...
