Single FETs, MOSFETs
Power Management Silicon N Channel MOSFET ANHI AUN065N10 with Low Gate Charge and Fast Recovery Diode
Product Overview The AUN065N10 is a Silicon N-Channel MOSFET designed for applications such as synchronous rectification, power management, and load switching. It features proprietary new trench technology, a fast recovery body diode, and low gate charge to minimize switching loss. This MOSFET is ...
ASA65R220E Silicon N Channel MOSFET for Power Switching in Server Power Telecom and UPS Applications
Product Overview The ASA65R220E and ASB65R220E are N-Channel Silicon MOSFETs designed for power switching applications. They offer a low drain-source on-resistance and easy gate control, making them suitable for various power supply topologies including Boost PFC, single-ended flyback, two...
Low RDS ON Silicon MOSFET N Channel Power Transistor ANHI ASR65R046EFD for Power Supply Applications
MOSFET Silicon N-Channel Product Overview The ASW65R046EFD, ASQ65R046EFD, and ASR65R046EFD are N-Channel Silicon MOSFETs designed for high-efficiency power applications. These enhancement-mode devices feature low drain-source on-resistance (RDS(ON) = 39m typ.) and are easy to control for gate ...
Silicon N Channel MOSFET AUD069N10A Optimized for Switch Mode Power Supplies and DC DC Converters
Product Overview The AUD069N10A is a Silicon N-Channel MOSFET designed for high-speed power switching applications. It features low drain-source on-resistance, enhanced body diode dv/dt capability, and improved avalanche ruggedness. This MOSFET is ideal for synchronous rectification in Switch Mode ...
Silicon N Channel MOSFET ANHI ASW50R130E Featuring Low Drain Source On Resistance and 500V Breakdown Voltage
Product Overview The ASA50R130E and ASW50R130E are N-Channel Silicon MOSFETs designed for applications in single-ended flyback or two-transistor forward topologies. They are suitable for use in PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting. Key features include low drain-source on...
High Speed Power MOSFET AUB040N10 Suitable for Hard Switching and Synchronous Rectification Circuits
Product Overview The AUB040N10 and AUP042N10 are N-Channel Silicon MOSFETs designed for high-performance applications. They are ideal for synchronous rectification in Switched-Mode Power Supplies (SMPS), hard switching, and high-speed DC/DC converters within the telecommunications and industrial ...
Power switching device ANHI ASA60R170E MOSFET transistor with low gate threshold voltage and leakage
Product Overview The ASA60R170E is a Silicon N-Channel MOS field-effect transistor designed for high-efficiency power switching applications. It features a low drain-source on-resistance (RDS(ON) = 0.139 typ.) and is easy to control due to its enhancement mode gate switching. This MOSFET is suitable ...
Power MOSFET ASA60R090EFDA designed for application servers and solar inverter power supply circuits
Product Overview The ASA60R090EFDA and ASW60R090EFDA are N-Channel Silicon MOSFETs designed for soft switching applications. They are ideal for use as Boost PFC switches and in Half bridge, Asymmetric half bridge, Series resonance half bridge, and Full bridge topologies, including phase-shift-bridge ...
N Channel Power MOSFET ANHI AUP062N08BG with Low Drain Source On Resistance and High Switching Speed
AUA/AUB/AUP/AUN/AUD062N08 - N-Channel Power MOSFET The AUA/AUB/AUP/AUN/AUD062N08 series are N-Channel Power MOSFETs designed for synchronous rectification and hard switching applications. These devices are suitable for high-speed circuits, telecom applications, and industrial SMPS. Key features ...
Enhancement mode N Channel MOSFET AUP039N10 with 3.9 milliohm RDSon and 65nC typical gate charge rating
Product Overview The AUN036N10, AUP039N10, AUA039N10, and AUB039N10 are N-Channel Silicon MOSFETs designed for efficient power management applications. These enhancement-mode devices feature low drain-source on-resistance and are easy to control, making them ideal for single-ended flyback or two...
N Channel Silicon MOSFET ASA60R150E ideal for power supplies adapters and LED lighting applications
Product Overview The ASA60R150E and ASW60R150E are N-Channel Silicon MOSFETs designed for high-efficiency power applications. Featuring low drain-source on-resistance (RDS(on)) and easy gate control, these enhancement-mode devices are ideal for use as Boost PFC switches, single-ended flyback ...
Power Switching Enhancement Mode MOSFET ASD70R600E N Channel with Low RDS on and Typical Gate Charge
Product Overview The ASA70R600E, ASU70R600, and ASD70R600E are N-Channel Silicon MOSFETs designed for power switching applications. These enhancement-mode devices feature low drain-source on-resistance (RDS(on)) and easy gate control, making them suitable for single-ended flyback or two-transistor ...
High Voltage N Channel MOSFET ASA65R270E for in Power Supplies LCD TVs and LED Lighting Applications
Product Overview The ASD65R270E and ASA65R270E are N-Channel Silicon MOSFETs designed for single-ended flyback or two-transistor forward topologies. These enhancement-mode MOSFETs are easy to control and feature low drain-source on-resistance. They are suitable for applications such as PC power ...
Silicon N Channel MOSFET AUD034N04LA Designed for LCD PDP TVs PD Adaptors and LED Lighting Applications
Product Overview The AUD034N04LA is a Silicon N-Channel MOSFET designed for automotive applications. It is suitable for single-ended flyback or two-transistor forward topologies, commonly found in PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting. Key features include low drain-source ...
Low Gate Charge 20V N Channel MOSFET with Advanced Trench Technology A Power microelectronics AP90N02NF
Product Overview The AP90N02NF is a 20V N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 2.5V. This device is specifically designed for battery protection and other switching ...
Compact SOT 23 Package N Channel MOSFET ALJ BSS138 Designed for Solid State Relay and Display Control
Product Overview The SHENZHEN LONG JING MICRO-ELECTRONICS CO., LTD. BSS138 is an N-Channel MOSFET in a SOT-23 plastic-encapsulated package. It features a high-density cell design for extremely low RDS(on) and a rugged, reliable construction. This MOSFET is designed for direct logic-level interface ...
switching transistor A Power microelectronics AP40P04D P Channel MOSFET with trench technology design
Product Overview The AP40P04D is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 4.5V. This MOSFET is well-suited for battery protection and other switching ...
P Channel MOSFET ALJ AO3415 Featuring Low RDS ON and Gate Voltage Operation at 1.8V for PWM Circuits
Product Overview The AO3415 is a P-Channel MOSFET from Shenzhen Long Jing Micro-Electronics Co., Ltd., designed with advanced trench technology. It offers excellent low on-resistance (RDS(ON)) and low gate charge, with operation possible at gate voltages as low as 1.8V. This device is ESD protected ...
SOT 23 Plastic Encapsulated ALJ 2N7002K N Channel MOSFET with High Saturation Current Capability
Product Overview The 2N7002K is an N-Channel MOSFET from Shenzhen Long Jing Micro-Electronics Co., Ltd., designed with a high-density cell structure for low RDS (ON) and serves as a voltage-controlled small signal switch. It is rugged, reliable, and offers high saturation current capability. This ...
252 3L Package 650V MOSFET A Power microelectronics APJ14N65D designed for UPS and PFC circuit applications
Product Overview The APJ14N65D is a 650V N-Channel Enhancement Mode MOSFET from the CoolFET II family, engineered with charge balance technology to deliver extremely low on-resistance and low gate charge performance. This MOSFET is ideal for applications demanding superior power density and ...
