Single FETs, MOSFETs
Load Switching Component HUAYI HYG023N04NR1D N Channel Enhancement Mode MOSFET with Avalanche Tested
Product OverviewThe HYG023N04NR1D is a single N-Channel Enhancement Mode MOSFET from Hymexa, designed for high-performance applications. It features a low on-state resistance of 2.3 m (typ.) at VGS = 10V, 45V/140A rating, and is 100% avalanche tested for reliability. This rugged component is ...
Super Junction Power MOSFET 650V N Channel HUAKE HCH65R180 for High Frequency Switching Applications
HCH65R180 650V N-Channel Super Junction Power MOSFET The HCH65R180 is a 650V N-Channel Super Junction Power MOSFET from HUAKE semiconductors, designed for high-frequency switching applications. It features low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt ...
Power Switching MOSFET Dual N Channel HYG170ND03LA1S 30 Volt 9 Amp with Avalanche Tested Reliability
Product Overview The HYG170ND03LA1S is a Dual N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers a 30V/9A rating with low on-state resistance (RDS(ON)) of 14.5 m (typ.) at VGS = 10V and 19.7 m (typ.) at VGS = 4.5V. This device is ...
Fast Switching N Channel MOSFET HUASHUO HSS0008 Featuring Advanced Trench Technology and Performance
Product Overview The HSS0008 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. The HSS0008 meets RoHS and Green Product requirements with ...
High voltage switching MOSFET HUAKE SMD2N65 650V N Channel for power supply and correction circuits
Product OverviewThe SMD2N65 is a 650V N-Channel MOSFET designed for high-frequency switching mode power supplies and active power factor correction applications. It offers advantages such as low gate charge, low Crss, 100% avalanche testing, fast switching, and improved dv/dt capability, making it a ...
Power Switching MOSFET HUASHUO HSL3002 N Channel Trenched Device with Low Gate Charge and High Density
Product Overview The HSL3002 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converter circuits. It offers excellent RDS(ON) and gate charge characteristics. This device meets RoHS and Green Product requirements and is 100% ...
P Channel MOSFET HSK2P25 Fast Switching Device with Low Gate Charge and Performance in Load Switches
HSK2P25 P-Ch 250V Fast Switching MOSFETs The HSK2P25 is a high cell density trenched P-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. It features super low gate charge, excellent Cdv/dt effect decline, and is built with advanced ...
N Channel MOSFET 500V TO 220F Package Featuring Avalanche Tested HUAKE SMF9N50 for Power Electronics
Product OverviewThe SMF9N50 is a 500V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction. It features low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, with a typical ...
Dual N Channel MOSFET HUASHUO HSM4204 Featuring RoHS Compliance and Excellent Switching Performance
Product Overview The HSM4204 is a dual N-channel MOSFET featuring high cell density trenched technology, offering excellent RDS(ON) and gate charge for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function ...
100V N Channel MOSFET HUAKE HSD50N10 with Low Gate Charge and High Frequency Switching Capability
HSD50N10 100V N-Channel MOSFETThe HSD50N10 is a 100V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching applications. It offers a continuous drain current of 50A and a low on-resistance of 13m (Typ) at VGS=10V. Key features include low gate charge, low Crss, 100% ...
HYG800P10LR1D P Channel Enhancement Mode MOSFET with TO 252 2L Package and 75 Watt Power Dissipation
Product OverviewThe HYG800P10LR1D/U/V is a P-Channel Enhancement Mode MOSFET designed for power management applications, particularly in DC/DC converters and load switching. It offers robust performance with a -100V drain-source voltage, -20A continuous drain current, and low on-resistance (RDS(ON) ...
P channel MOSFET trench technology 30V HUASHUO HSM9435 with low gate charge and switching performance
Product Overview The HSM9435 is a P-channel, 30V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it suitable for synchronous buck converter applications. This device meets RoHS and Green Product requirements ...
Low Gate Charge and High Cell Density MOSFET HUASHUO HSBB4016 for Synchronous Buck Converter Circuits
Product Overview The HSBB4016 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function ...
N Channel MOSFET HUASHUO HSU5N25 Featuring Trench Technology and RoHS Certification for Power Conversion
Product Overview The HSU5N25 is a high-performance N-channel Fast Switching MOSFET designed for synchronous buck converter applications. Featuring extreme high cell density, it offers excellent RDS(ON) and gate charge characteristics. This MOSFET meets RoHS and Green Product requirements, is 100% ...
N Channel Trench MOSFET HUASHUO HSP6016A Suitable for Synchronous Buck Converters and Power Circuits
Product Overview The HSP6016A is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, ...
N Channel Enhancement Mode MOSFET HYG024N03LR1B for Switching and Power Management Applications
Product OverviewThe HYG024N03LR1 is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers high performance with low RDS(ON) at various gate-source voltages, 100% avalanche tested, and a reliable, rugged construction. Lead-free ...
Single N Channel Enhancement Mode MOSFET HUAYI HYG025N06LS1B with Low RDS ON and High Current Rating
HYG025N06LS1P/B Single N-Channel Enhancement Mode MOSFET The HYG025N06LS1P/B is a single N-Channel enhancement mode MOSFET designed for high-performance applications. It features low on-state resistance (RDS(ON) = 2.5 m typ. @ VGS = 10V) and high continuous drain current capability (160A). This ...
Fast switching 80V P channel MOSFET HUASHUO HSH8119 featuring trench technology and low gate charge for converters
Product Overview The HSH8119 is a P-channel, 80V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS ...
High frequency switching MOSFET HUAKE SMF11N50 with low gate charge and avalanche tested reliability
Product OverviewThe SMF11N50 is a 500V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching applications. It features low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability. This MOSFET is ideal for High Frequency Switching Mode ...
Power MOSFET HUAYI HY1710P with 70A Continuous Current and 100V Maximum Drain Source Voltage Rating
Product OverviewThe HUAYI HY1710 is a N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It features a high voltage rating of 100V and a continuous drain current of 70A, with a low on-resistance of 15m (typ.) at VGS = 10V. This device is ...
