Single FETs, MOSFETs
Low Gate Voltage N Channel MOSFET HXY MOSFET SI7336ADP T1 GE3 HXY with 180mJ Avalanche Energy Rating
SI7336ADP-T1-GE3The SI7336ADP-T1-GE3 is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, capable of operating with gate voltages as low as 4.5V. This device is designed for applications such as battery protection and general ...
Low RDS on N Channel MOSFET HUASHUO HSBB4072 Ideal for in SMPS DC DC Converters and Or ing Circuits
Product Overview The HSBB4072 is a high-performance N-Channel MOSFET designed for fast switching applications. Featuring advanced trench MOS technology, it offers low RDS(on) and is 100% EAS guaranteed. This MOSFET is ideal for use in Synchronous Rectification for SMPS, DC/DC Converters, and Or-ing ...
HSU6006 Fast Switching N Channel MOSFET with Low Rdson and Super Low Gate Charge Characteristics
Product Overview The HSU6006 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and ...
High Cell Density Trench N Channel MOSFET HUASHUO HSS3402A Suitable for Load Switch Applications
Product Overview The HSS3402A is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This device meets RoHS and Green Product requirements ...
High cell density trench technology p channel mosfet hsba6115 fast switching 60v for power conversion
Product Overview The HSBA6115 is a P-channel, 60V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% ...
N Channel Power MOSFET HUAKE HCF65R600 with Low Gate Charge and High Frequency Switching Capability
Product OverviewThe HCF65R600 is a 650V N-Channel Super Junction Power MOSFET from HUAKE semiconductors. It offers features such as low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, making it suitable for high frequency switching mode power supplies and ...
P channel MOSFET HUASHUO HSBB4113 featuring fast switching and excellent RDS ON for power circuits
Product Overview The HSBB4113 is a P-channel fast-switching MOSFET featuring high cell density trench technology, offering excellent RDS(ON) and gate charge for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full ...
100V 60A N Channel Enhancement Mode MOSFET HUAYI HY3010D Low On Resistance Power Transistor
HY3010D/U/V N-Channel Enhancement Mode MOSFETThe HY3010D/U/V is a high-performance N-Channel Enhancement Mode MOSFET designed for various power applications. It features a high voltage rating of 100V and a continuous drain current of 60A, with a low on-state resistance of 10m (typ.) at VGS = 10V. ...
N Channel MOSFET HUASHUO HSS2302A with Super Low Gate Charge and High Cell Density Trench Technology
Product Overview The HSS2302A is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device meets RoHS and Green Product requirements and ...
Fast Switching N Channel MOSFET HUASHUO HSBA30N20 with 200V Drain Source Voltage and Low Gate Charge
HSBA30N20 N-Ch 200V Fast Switching MOSFETs Product Overview The HSBA30N20 is a high-performance N-channel MOSFET designed for fast switching applications. Featuring proprietary new trench technology, it offers a low on-resistance of 43m typ. at VGS=10V and a low gate charge to minimize switching ...
N channel mosfet huashuo hsu20n15a featuring high cell density trench technology and 150 volt rating
Product Overview The HSU20N15A is a high-performance N-channel MOSFET featuring an N-Ch 150V rating and fast switching capabilities. Designed with extreme high cell density, it offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This ...
N Channel MOSFET HUAYI HYG050N10NS1P 100V 135A RoHS Compliant Power Device for Motor Control
Product OverviewThe HYG050N10NS1P is an N-Channel Enhancement Mode MOSFET designed for power switching applications and motor control. It features a high continuous drain current of 100V/135A, a low on-state resistance of 4.4m (typ.) at VGS = 10V, and is 100% avalanche tested for reliability. Lead...
rugged design N Channel Enhancement Mode MOSFET HUAYI HYG055N08NS1C2 for switching and motor control
HYG055N08NS1C2 N-Channel Enhancement Mode MOSFETThe HYG055N08NS1C2 is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It offers low on-resistance (RDS(ON)=4.8 m typ. @ VGS = 10V), 100% avalanche tested, and a reliable...
Single N Channel MOSFET HUAYI HYG110N11LS1C2 with Low RDS ON and Halogen Free RoHS Compliant Package
HYG110N11LS1C2 Single N-Channel Enhancement Mode MOSFET Product Overview The HYG110N11LS1C2 is a single N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features a low on-resistance (RDS(ON)) of 9.8 m typ. at VGS = 10V and 14.5 m typ. at VGS = 4.5V, 100% avalanche ...
HSBB3313 Dual P Channel MOSFET 30V Fast Switching Suitable for Battery Powered and Portable Systems
Product Overview The HSBB3313 is a dual P-channel, 30V fast switching MOSFET designed for high-efficiency applications. Featuring advanced Trench MOS Technology, these MOSFETs offer 100% EAS guaranteed performance and are available in a Green Device option. Ideal for battery-powered systems and ...
Trench Technology N channel MOSFET HUASHUO HSU15N10 Designed for Synchronous Buck Converter Circuits
Product Overview The HSU15N10 is a high-performance N-channel Fast Switching MOSFET designed for synchronous buck converter applications. It features extreme high cell density, providing excellent RDS(ON) and gate charge characteristics. This device meets RoHS and Green Product requirements and is ...
HSU4016 N Channel 40V MOSFET with Fast Switching Capability and High Cell Density Trenched Technology
Product Overview The HSU4016 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converters. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS ...
synchronous buck converter MOSFET HUASHUO HSBB3052 with excellent CdV dt effect and low gate charge
Product Overview The HSBB3052 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability ...
Trench Technology N Channel MOSFET HUASHUO HSS2302B with 20V Drain Source Voltage and Fast Switching
HSS2302B N-Channel 20V Fast Switching MOSFETs Product Overview The HSS2302B is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in most low-power switching and load switch applications. It meets RoHS and Green Product requirements and offers super low gate ...
Power MOSFET HUAYI HYG016N04LS1W Featuring Low On Resistance and High Maximum Junction Temperature
Product OverviewThe HYG016N04LS1W is an N-Channel Enhancement Mode MOSFET designed for switching applications, inverters, and power tools. It features low on-state resistance (RDS(ON)) of 1.2 m (typ.) at VGS = 10V and 1.6 m (typ.) at VGS = 4.5V, 100% avalanche tested, and a reliable, rugged design. ...
